Unified electrical model for the contact regions of staggered Thin Film Transistors
نویسندگان
چکیده
In this work, we propose an unified compact model, which includes the effects of both source and drain contact regions, to describe electrical characteristics staggered thin film transistors (TFTs). The model is based on a generic drift analytical expression that describes intrinsic channel transistor. Despite distributed two-dimensional nature contacts in configurations, two-terminal components are usually preferred regions. regard, versatile simple expressions current–voltage relations regions proposed work. These physics underlying metal–organic-metal structure. They can be adapted different transport conditions, such as Ohmic, space-charge-limited or Schottky-like contacts. This adaptation controlled with value single parameter modifies concavity convexity these expressions. works together evolutionary extraction procedure, presented previous work for TFTs negligible effects, here transistors. results procedure have been validated published experimental data TFTs, mostly organic (OTFTs). agrees other procedures tested successfully literature were defined cope specific kinds TFTs. our unify procedures.
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ژورنال
عنوان ژورنال: Organic Electronics
سال: 2021
ISSN: ['1878-5530', '1566-1199']
DOI: https://doi.org/10.1016/j.orgel.2021.106129